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Bulk Electron Accumulation LDMOS With Extended Superjunction Gate

Weizhong Chen,Haifeng Qin,Hongsheng Zhang,Zhengsheng Han

IEEE Transactions on Electron Devices（2022）

Cited 4|Views15
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Abstract
An Extended Superjunction (SJ) Gate (ESG) Lateral Double-diffused Metal–Oxide Semiconductor (LDMOS) with full bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated by the SENTAURUS. It features a Fin Gate including Planar Gate (PG) and ESG: the ESG is formed by the P-Pillar and two integrated back-to-back diodes ...
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Key words
Logic gates,FinFETs,Doping,Current density,Leakage currents,Electric potential,Telecommunications
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