Bipolar Static Induction Transistor With Insulated Gate
IEEE Transactions on Electron Devices（2022）
摘要
In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET. Since the large part of the current is not confined at the semiconductor/insulator...
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关键词
Logic gates,MOSFET,Voltage,Insulated gate bipolar transistors,Junctions,Switches,Static induction transistors
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