Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Luke Yates,Brendan P. Gunning,Mary H. Crawford,Jeffrey Steinfeldt,Michael L. Smith,Vincent M. Abate,Jeramy R. Dickerson,Andrew M. Armstrong,Andrew Binder,Andrew A. Allerman,Robert J. Kaplar

IEEE Transactions on Electron Devices（2022）

Cited 22|Views28

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Abstract

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm2) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed...

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Key words

Gallium nitride,Anodes,Epitaxial growth,Temperature measurement,Substrates,Silicon,Schottky diodes

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