Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Luke Yates,Brendan P. Gunning,Mary H. Crawford,Jeffrey Steinfeldt,Michael L. Smith, Vincent M. Abate,Jeramy R. Dickerson,Andrew M. Armstrong,Andrew Binder,Andrew A. Allerman,Robert J. Kaplar

IEEE Transactions on Electron Devices（2022）

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摘要

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm2) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed...

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关键词

Gallium nitride,Anodes,Epitaxial growth,Temperature measurement,Substrates,Silicon,Schottky diodes

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