Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters
IEEE Transactions on Electron Devices（2022）
Abstract
Amorphous indium–gallium–zinc oxide (a-IGZO) is a widely studied semiconductor for cutting-edge electronics applications because of its low absorbance, high charge carrier mobility, and versatility. For the practical application of a-IGZO thin films, postdeposition thermal treatment is typically applied to enhance the device’s performance. Here, we present a study on the effect of oxygen plasma po...
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Key words
Plasmas,Performance evaluation,Radio frequency,Transistors,Thin film transistors,Surface treatment,Annealing
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