650 V Super-Junction Insulated Gate Bipolar Transistor Based on 45 μm Ultrathin Wafer Technology

Yuzhou Wu,Zehong Li,Jia Pan, Chong Chen,Jiuying Yu,Min Ren,Bo Zhang

IEEE Electron Device Letters（2022）

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摘要

In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are manufactured. It is worth mentioning that generation II is fabricated using 45 $ {\mu }\text{m}$ ultrathin wafer technology. Due to extra ...

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关键词

Insulated gate bipolar transistors,Logic gates,Current density,Temperature measurement,Silicon,Germanium,Modulation

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