An atomistic-to-microscale computational analysis of the dislocation pileup-induced local stresses near an interface in plastically deformed two-phase materials

•The microscale dislocation slip together with the atomic-scale process of a step formation at the slip-interface intersection are simultaneously resolved in one single computer model.•The internal stress concentration ahead of the slip-interface intersection spans a long range up to hundreds of nanometers when tens of dislocations are piled up at the buried interface.•The dislocation pileup-induced stress concentration ahead of the slip-interface intersection deviates from the Eshelby model-based common wisdom which treats interface as rigid.•The pileup-induced stress can be largely underestimated if one relies on nanoscale atomistic simulations to correlate the dislocation density with the pileup tip stress intensity factor.