Grain boundary segregation in Si-doped B-based ceramics and its effect on grain boundary cohesion

Boron carbide and boron suboxide are attractive for their low densities and ultrahigh hardness values, yet they exhibit poor fracture resistance. Strategies to improve mechanical performance aim to control bulk microstructures and properties by incorporating Si-based additives. A related approach to toughen boron carbide is tailoring the phase-like states of grain boundaries by applying the concept of grain boundary complexion engineering. This work directly investigates the potential of grain boundary complexion engineering to improve fracture resistance by systematically evaluating grain boundary segregation behavior of a polycrystalline silicon hexaboride / boron carbide diffusion couple using aberration-corrected scanning transmission electron microscopy and ζ-factor microanalysis. A main result was that all grain boundaries in the diffusion couple exhibited Si segregation that, depending on the bulk Si concentration, approached up to 3 monolayers of coverage, thereby resulting in nanolayer complexions (oftentimes known as intergranular films). Furthermore, upon analyzing 110 distinct grain boundaries throughout the diffusion zone and an impurity boron suboxide region, free energies of Si segregation in boron carbide and boron suboxide were experimentally determined using the Brunauer, Emmett and Teller (BET) multilayer grain boundary segregation theory. Subsequently, changes in grain boundary energy due to Si segregation were quantified and a maximum energy reduction of 51% and 81% were observed in boron carbide and boron suboxide, respectively, which led to decreases in works of adhesion of 18% and 17%, respectively. In summary, this work uncovers grain boundary processing-structure-property relationships that can be used to improve the fracture resistance in icosahedral boron-based ceramics.