A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface

As data sizes increase exponentially, the demand for higher-density NAND with a smaller cell size and a higher interface speed has also increased [1]–[4]. However, the increased number of WL-stack layers results in a smaller sensing circuit size and a smaller WL-to-WL spacing, which increases the intrinsic transistor variation and the inter-cell interference. One way to achieve good density while ...