Memory Properties of SiOx- and SiNx-Based Memristors

Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.