A High-Efficiency Fast-Transient LDO With Low-Impedance Transient-Current Enhanced Buffer
IEEE Transactions on Power Electronics(2022)
摘要
This article proposes a new low-impedance transient-current enhanced (LTE) buffer, which is applied for low-dropout regulator (LDO) with large off-chip capacitor. The LTE buffer is based on current-shunt feedback technique and two ac coupling networks, which can achieve an extremely low output impedance and high charging/discharging current of the gate of power transistor at load transient respons...
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关键词
Logic gates,Voltage,Impedance,Power transistors,Transient analysis,Resistance,Long Term Evolution
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