PCRAM electronic synapse measurements based on pulse programming engineering

Pulse programming engineered phase change random access memories (PCRAM) as electronic synapses are attractive for high-performance neuromorphic computing. Pulse programming plays a key role to affect the synaptic plasticity of PCRAM electronic synapses. However, its principles and implementations are rarely reported. This work interprets the implementation rules of PCRAM electronic synapses using pulse programming, including the construction and optimization of testing instrument, the clarification of pulse programming principles for different types of PCRAM electronic synapses as well as the demonstration of statistical results of synaptic simulation. The current study highlights the relationship between resistance voltage characteristic of PCRAM and the design of pulse programming, which is of significance for the achievement of reliable PCRAM electronic synapses.