Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization

IEEE Transactions on Very Large Scale Integration (VLSI) Systems(2022)

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摘要
The size and parameter optimization for the 5-nm carbon nanotube field effect transistor (CNFET) static random access memory (SRAM) cell was presented in Part I of this article. Based on that work, we propose a carbon nanotube (CNT) SRAM array composed of the schematically optimized CNFET SRAM and CNT interconnects. We consider the interconnects inside the CNFET SRAM cell composed of metallic sing...
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关键词
CNTFETs,Layout,Integrated circuit interconnections,FinFETs,Metals,SRAM cells,Electrodes
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