Monolithic Perovskite/Silicon Tandem Solar Cells Fabricated Using Industrial p‐Type Polycrystalline Silicon on Oxide/Passivated Emitter and Rear Cell Silicon Bottom Cell Technology

Combining a perovskite top cell with a conventional passivated emitter and rear cell (PERC) silicon bottom cell in a monolithically integrated tandem device is an economically attractive solution to boost the power conversion efficiency (PCE) of silicon single-junction technology. We report on proof-of-concept perovskite/silicon tandem solar cells using high temperature stable bottom cells featuring a polycrystalline silicon on oxide (POLO) front junction and a PERC-type passivated rear side with local aluminium-p+ contacts. For this PERC/POLO cell, a process flow that is compatible with industrial, mainstream PERC technology is implemented. We connect top and bottom cell via a tin-doped indium oxide recombination layer. The recombination layer formation on the POLO front junction of the bottom cell is optimized by post-deposition annealing and mitigation of sputter damage. The perovskite top cell is monolithically integrated in a p-i-n junction device architecture. Proof-of-concept tandem cells demonstrate a power conversion efficiency (PCE) of up to 21.3%. Based on our experimental findings and supporting optical simulations, we identify major performance enhancements by process and layer optimization and estimate a PCE potential of 29.5% for these perovskite/silicon tandem solar cells with PERC-like bottom cell technology. This article is protected by copyright. All rights reserved.