Using EBIC to Understand Radiation Damage in Electronics.

Albert Talin,David Ashby,Diana Garland,Madeline Esposito,Zoey Warecki,Gyorgy Vizkelethy,Juan Llinas,Andrew Armstrong,John Cumings,Matthew Marinella

Proposed for presentation at the Microelectronics Reliability and Qualification Workshop held February 9-11, 2021 in Los Angeles (online), CA.（2021）

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摘要

He+ beam, is attributed to localized interfacial Pb centers and delocalized positive fixed-charges, as surmised from simulations. Comprehension of the long-term interaction and mobility of radiation-induced damage are key for future design of rad-hard devices.

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关键词

radiation damage,ebic,electronics

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