Role of pO₂ and film microstructure on the memristive properties of La₂NiO_4+δ/LaNiO_3−δ bilayers

In mixed-conducting LaNiO3−δ/La2NiO4+δ bilayers the deposition conditions determine the film microstructure and the oxygen defect concentration at the interface (and ) building up an electronic barrier which induces a memristive behavior.