High voltage CIBH diodes with new structure on the cathode side of the edge

We have studied the destruction mechanism of Controlled Injection of Backside Holes (CIBH) diodes during overcurrent reverse recovery operation. The most likely mode of destruction is the temperature rise caused by the current filament at the edge of the active area. In this paper, a novel backside edge design for CIBH diode is proposed based on the Sentaurus-TCAD, which realizes high overcurrent turn-off capability and optimizes the snap-off characteristics. When the continuous floating p-layer on the cathode side of the edge is separated by a n-layer below the lateral resistive zone, the overcurrent turn-off capability of the high-voltage CIBH diode can be improved.