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2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory

Min-Woong Seo,Myunglae Chu,Hyun-Yong Jung,Suksan Kim,Jiyoun Song, Daehee Bae,Sanggwon Lee,Junan Lee,Sung-Yong Kim,Jongyeon Lee,Minkyung Kim, Gwi-Deok Lee,Heesung Shim,Changyong Um,Changhwa Kim,In-Gyu Baek,Doowon Kwon,Hongki Kim,Hyuksoon Choi,Jonghyun Go,Jungchak Ahn,Jae-Kyu Lee,Chang-Rok Moon,Kyupil Lee,Hyoung-Sub Kim

IEEE Journal of Solid-State Circuits（2022）

Cited 12|Views8
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Abstract
This article presents a low random noise, a low-power, and a high-speed 2-mega pixels (Mp) global-shutter (GS)-type CMOS image sensor (CIS) using an advanced dynamic random access memory (DRAM) technology. GS CIS is one of the alternatives to solve image distortion issues caused by a conventional rolling-shutter (RS) CIS operation, since a 2-D image data can be simultaneously sampled by the in-pix...
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Key words
Substrates,Random access memory,Capacitors,Sensor arrays,Power demand,Integrated circuit interconnections,Wideband
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