High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO 2 : Si-Based 1T-1C FeRAM Arrays
IEEE transactions on electron devices/IEEE transactions on electron devices（2022）
关键词
16-kb array,130-nm technology node,data retention,emerging memory,endurance,ferroelectric memories,ferroelectric random access memory (FeRAM),hafnium oxide,HfO2:Si,nonvolatile memory (NVM),solder reflow
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