The fundamental operation mechanisms of nc-SiOX≥0:H based tunnel recombination junctions revealed

Two terminal multi-junction (MJ) photovoltaic (PV) devices are well established concepts to increase the solar-to-electrical power conversion in reference to single PV junctions. In multi-junction PV devices two consecutive sub-cells are interconnected using a tunnel recombination junction (TRJ) in which the light excited holes of one sub-cell recombine with the light excited electrons of the other sub cell. An ideal TRJ is an ohmic contact with non-rectifying behaviour. TRJ’s based on p- and n-doped silicon-oxides have been successfully applied in a variety of hybrid multi-junction PV devices in which tunnelling and trap-assisted tunnelling over width of 5–20 nm rules the TRJ’s recombination kinetics.