Anisotropies of angle-resolved polarized Raman response identifying in low miller index beta-Ga2O3 single crystal

Beta-phase gallium oxide (beta-Ga2O3) with a monoclinic lattice structure is a research hotspot in the field of ultra wide bandgap semiconductors in the world and displays intriguing anisotropic properties. Here, we synthesize beta-Ga2O3 single-crystal (SC) using the edge-defined film-fed growth method and systematically investigate the anisotropic structural and vibrational properties. The anisotropic nature of beta-Ga2O3 SC is revealed by angle resolved polarized Raman spectroscopy under linearly polarized excitations, in which different vibration modes exhibit pronounced periodic variations in intensity. In the detection of different excitation wavelengths, not only the Raman intensity show significant change, but also the strongest main peak of the Raman modes also shows significant difference. In addition, the angular dependence of the peak intensities of the A(g)(4), A(g)(6), A(g)(7), A(g)(10) and B-g modes will also be affected by different low Miller index. All the experimental results above are beneficial to the understanding of inelastic light-scattering process of beta-Ga2O3 SC.