Properties of Y1Ba2Cu3O7−δ and Ba1−XKXBiO3 step-edge grain boundary junctions

Abstract A technique for the fabrication of sharp and straight step-edges on LaAlO 3 (LAO) substrates by Ar-ion milling is reported here. Diamond-like carbon (DLC) thin films, deposited by pulsed laser ablation, were used as masks. Clear Shapiro steps were observed in the current-voltage (IV) characteristics of Y 1 Ba 2 Cu 3 O 7−δ (YBCO) step-edge junctions with millimeter-wave irradiation. Also, the transport properties of epitaxial Ba 1−X K X BiO 3 (BKBO) films deposited on LaAlO 3 step-edge substrates were studied.