GaN Electronics For High Power, High Temperature Applications
The Electrochemical Society interface(2000)
摘要
A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
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关键词
gan,high power
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