Material and integration challenges for large scale Si quantum computing

M. Vinet, T. Bédécarrats,B. Cardoso Paz,B. Martinez,E. Chanrion,E. Catapano,L. Contamin, L. Pallegoix, B. Venitucci, V. Mazzocchi, H. Niebojewski,B. Bertrand, N. Rambal,C. Thomas,J. Charbonnier,P.-A. Mortemousque, J.-M. Hartmann,E. Nowak,Y. Thonnart, G. Billiot, M. Cassé,M. Urdampilleta,Y.-M. Niquet, F. Perruchot,S. De Franceschi,T. Meunier

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

Si spin qubits are very promising to enable large scale quantum computing as they are fast, of high quality and small. However, they are still lagging behind in terms of number of qubits. Indeed there are material and integration challenges to be tackled before fully expressing their potential.

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关键词

Temperature measurement,Qubit,Quantum dots,Logic gates,Split gate flash memory cells,Silicon,Wave functions

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