Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability

Nujhat Tasneem,Zheng Wang,Zijian Zhao,Navnidhi Upadhyay,Sarah Lombardo,Hang Chen,Jae Hur,Dina Triyoso,Steven Consiglio,Kanda Tapily,Robert Clark,Gert Leusink,Santosh Kurinec,Suman Datta,Shimeng Yu,Kai Ni,Matthias Passlack,Winston Chern,Asif Khan

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

We track carrier capture and emission dynamics during write operations in n-type ferroelectric-field-effect transistors (FEFETs) by directly and separately measuring the trap related hole and electron currents through the body terminal and shorted source-drain, respectively. Both electron and hole currents are simultaneously observed during polarization switching, irrespective of whether the chann...

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关键词

Silicon compounds,Electron traps,Memory management,Switches,Fatigue,Iron,Transistors

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