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Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Han Wui Then,M. Radosavljevic,P. Koirala,N. Thomas,N. Nair,I Ban,T. Talukdar, P. Nordeen, S. Ghosh,S. Bader,T. Hoff,T. Michaelos,R. Nahm,M. Beumer, N. Desai, P. Wallace, V Hadagali,H. Vora,A. Oni,X. Weng,K. Joshi,I Meric, C. Nieva,S. Rami,P. Fischer

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

Cited 37|Views33
Key words
Industries,Radio frequency,Three-dimensional displays,Logic gates,FinFETs,Silicon,Inverters
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