High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing

Cryogenic on-chip memory requires low energy consumption for enabling cryogenic and exascale computing. With FinFET Si data calibration, this work clearly demonstrates that the 4T cryogenic SRAM surpasses various kinds of the 6T SRAM in area, speed, stability, and energy efficiency at both 77K and 300K. Compared to the 6T SRAM with regular threshold voltage in high-density design (6T-RVt-HD) at 30...