Photodamage resistance properties and application of In:LiNbO3

Xu Wusheng,Wang Rui,Zhen Xihe,Zhang Wanlin,Chen Xiaojun,Wang Zhengping,Zhouguangyong

Ferroelectrics（2001）

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摘要

Abstract Doping different concentrations of In2O3 in LiNbO3, In:LiNbO3 crystals were grown. The photodamage threshold value and infrared transmittance spectra of the crystals were measured we measured the absorption edge shift and OH− absorption peak shift. The shg conversion efficiency and the phase-matching temperature are increased by in doping. The phase-matching temperature of In:LiNbO3 is lower than that of Mb:LiNbO3 and Zn:LiNbO3.

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resistance

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