Experimental Setup for in Situ Investigation of Phase Changing Behavior in Phase-Change Random-Access Memory Medium by Microfocusing Nanosecond-Time-Resolved Ellipsometry
Japanese Journal of Applied Physics(2006)
Abstract
An ellipsometer with nanosecond time resolution has been proposed for the investigation of the phase change behavior of Ge2Sb2Te5 heated by electrical pulses of 20–100 ns in real time. This passive single-wavelength ellipsometer has a division-of-amplitude photopolarimeter (DOAP) configuration for polarization state detection to collect ellipsometric data in nanoseconds and consists of a microfocusing lens system to achieve a spot size of ~15 µm.
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Key words
Ge-Sb-Te,phase change optical disk,PRAM,time-resolved ellipsometry,crystallization kinetic
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