InAs Islands Formation on the InP(001) During High- Temperature Annealing in an As Flux
2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials (EDM)（2021）
Abstract
The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the [11̅0] direction. The height and density of InAs areas increases with an increase in the annealing temperature.
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Key words
indium phosphide,annealing,phosphorus,indium arsenide,nucleation
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