1 060 nm wavelength high power diode array module

InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1 060 nm was grown.The laser bars with a stripe width of 200 μm and a filling factor of 50% was fabricated.The back HR coating is Al_2O_3/5(HfO_2/SiO_2)/HfO_2 and the front AR coating is Al_2O_3.The module's CW output power reaches to 68.5 W at a current of 80 A.The threshold current is 10 A and the central wavelength is 1 059 nm with a FWHM of 9 nm.