High power output and temperature characteristics of 1.06μm diode array module

In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% are processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20 o C to 40 o C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20 o C. The central wavelength is 1059.4nm.