Simulation Comparative Study on Ga2O3 and SiC Schottky Diodes

This paper presents a comparative study on high voltage β-Ga ₂ O ₃ and 4H-SiC Schottky diodes based on device TCAD numerical simulations. Different Schottky diode structures are comparative investigated, and the results show that the Ga ₂ O ₃ Schottky diodes achieve much lower specific on-resistance (Ron,sp), much higher figure of merit (FOM) and better reverse recovery characteristics in comparison with that of the SiC Schottky diodes at almost the same level of breakdown voltage (BV). And the leakage current in reverse bias state of different structures is also evaluated, and the trench structure achieves much lower leakage current. The results of this paper can be used as a guideline for the design of high-voltage Ga ₂ O ₃ and SiC Schottky diodes.