20nmノード技術による7MB/s 64Gb 3ビット/セル DDR NANDフラッシュメモリ
Park Ki-Tae,Kwon Ohsuk,Yoon Sang-Yong,Choi Myung-Hoon,Kim In-Mo, Kim Bo-Geun,Kim Min-Seok,Choi Yoon-Hee, Shin Seung-Hwan,Song Youngson, Park Joo-Yong,Lee Jae-Eun,Eun Chang-Gyu, Lee Ho-Chul, Kim Hyeong-Jun,Lee Jun-Hee, Kim Jong-Young,Kweon Tae-Min,Yoon Hyun-Jun,Kim Taehyun,Shim Dong-Kyo,Sel Jongsun,Shin Ji-Yeon,Kwak Pan-Suk,Han Jin-Man,Kim Keon-Soo,Lee Sung-Soo,Lim Young-Ho,Jung Tae-Sung international solid-state circuits conference（2011）
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