I?V hysteresis of Pr0.7Ca0.3MnO3 during TEM observation

Conduction measurements with simultaneous transmission electron microscopy (TEM) were performed on thin Pr0.7Ca0.3MnO3 (PCMO) films deposited on tip-shaped Pt-Ir electrodes. A movable counter electrode was used to choose nanoscale region with contact areas smaller than 180 nm2 for investigation. The corresponding I-V data from this region showed a hysteresis curve which is characteristic to the material usable in resistance random access memories. In TEM images of PCMO before and after the measurement, no remarkable changes inside PCMO such as the formation of conducting path were recognized.