Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure

Self-assembled InAs/GaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) were subjected to growth ripening pause of comparatively shorter durations (0-50s) at the growth temperature (520°C). Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) studies indicate that the QD islands increase in size with the growth pause and correspondingly their density decreases. Photoluminescence (PL) studies were carried out on these QDs. The temperature dependence of the PL is studied and models to explain it are explored.