Perpendicular magnetic anisotropy in Ta/Pd (0–10 nm)/Co 2 FeAl 0.5 Si 0.5 /MgO/Ta structured films

One of the key issues for the practical application of the current-induced spintronic devices is of reducing the critical current (I c0 ) for the current-induced magnetization reversal. The perpendicular magnetic anisotropy (PMA) and high spin polarization of the ferromagnetic layer are theoretically predicted and experimental verified to be useful for reducing the critical current of the magnetic reversal.1