SiGe基板とGaAs基板のIn0.23Ga0.77AsチャネルMOSFETでの電流比ION/IOFFと移動度の比較Kong Xiangting,Liang Renrong,Zhou Xuliang, Li Shiyan,Wang Mengqi,Liu Honggang,Wang Jing,Wang Wei,Pan Jiao-QingIEEE Transactions on Electron Devices(2016)引用 0|浏览6暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要