SiGe基板とGaAs基板のIn0.23Ga0.77AsチャネルMOSFETでの電流比ION/IOFFと移動度の比較

Xiangbin Kong,Renrong Liang,Zhou Xuliang, Shiyan Li,Meng-Qi Wang, Honggang Liu, Jing Wang, Wei Wang, Jiaoqing Pan

IEEE transactions on electron devices/IEEE transactions on electron devices（2016）

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