Study of Linearity Performances of Junction-less Triple-Material Cylindrical Surrounding Gate MOSFET

In the proposed work, the study and thorough analysis of JLTMCSG MOSFET has been done. Its comparison with JLDMCSG MOSFET also being done based on different parameter variations like linearity study taking into account various suitable linearity metrics such as gm1, gm2, gm3,1-dB compression point, VIP2, VIP3 and IIP3. The analysis suggests that if designed properly JLTMCSG MOSFET will have superior linearity performance. At the same time distortion can be reduced due to lowered drain induced barrier lowering. It has a higher and more uniformity produced in the electric field which is suitable applications in microwave applications and RF communication and low noise amplifiers.