Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
Quantum Electronics(2017)
Abstract
The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.
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Key words
laser diode bars,algaas/gaas,quantum-well
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