Si − doped In0.145Ga0.855As0.123Sb0.877: A novel p − type quaternary alloy with high crystalline quality

Antimonide−based p − n junctions are particularly attractive for a wide variety of optoelectronic applications in the near and mid-infrared wavelength range. In this work, novel p −type Si−doped In 0.145 Ga 0.855 As 0.123 Sb 0.877 epitaxial layers were grown on GaSb(100) substrates by Liquid Phase Epitaxy (LPE) technique. The XPS spectra measured on Si−doped In 0.145 Ga 0.855 As 0.123 Sb 0.877 layers indicate that Si atoms behave as acceptors. The analysis of the surface depletion region and its relationship with phonon−plasmon L_ coupling were investigated using Raman spectroscopy, giving an acceptor concentration of N A ∼ 5.8 × 10 17 cm −3 for a depletion region thickness of d ∼ 9.4 nm. Low temperature photoluminiscence (PL) spectrum for the Si−doped In 0.145 Ga 0.855 As 0.123 Sb 0.877 layers showed a bound excitonic emission peak associated to neutral Sb acceptors, with an activation energy of ∼ 10 meV and a donor−acceptor transition. It was observed that the Si doping reduces the excitonic emission intensity and increases the donor−acceptor pair recombination intensity. • Novel p − type In 0.145 Ga 0.855 As 0.123 Sb 0.877 epitaxial layers with Si. • Si-doped quaternary alloy exhibits a higher donor-acceptor emission intensity. • Si Sb substitutions generate a highly effective recombination channel. • Study of hole concentration from the phonon-plasmon coupled L − mode. • Growth of p-type quaternary alloy by Liquid Phase Epitaxy (LPE).