Memory characteristics of room-temperature multiferroic hexaferrite Sr3Co2Fe24O41

We prepared the room-temperature magnetoelectric hexaferrite polycrystal Sr 3 Co 2 Fe 24 O 41 by the conventional solid-state reaction, the maximum magnetoelectric current of |J| = 8.8 μA/m2 was obtained at about μ0H = 12.9 mT. Furthermore, We obtained a stronger magnetoelectric effect when the remnant magnetization direction was the same with the scanning field than in contrast. The most important, we have demonstrated a type of room-temperature nonvolatile memory based on this characteristic. The magnetoelectric current |J| is employed to store binary information. By applying positive and negative magnetic field pulses, |J| achieved repeatable nonvolatile switching between high and low states. Our work enriched the magnetoelectric effect of multiferroic hexaferrites and provided a new idea to implement next-generation nonvolatile information memory devices.