Stress- and Trap-Induced Body Fluctuations in 45nm SOI MOSFETs

Phase Arrays antenna systems have enabled Silicon technology to be a competitive solution for many mmWave applications. The mature Silicon infrastructure brings key advantages in cost, manufacturing, design infrastructure and understanding of the fundamental physics of reliability degradation. The superior characteristics of Silicon-on-Insulator (SOI) transistors have proven to be of great importance for RF power amplifier (PA) applications, especially when compared to bulk devices [1]–[2]. In contrast, the absence of a body contact portends body charging effects that modify the internal potential of the transistor (this leads to current fluctuations, e. g. kink effect [3]). These effects are compounded considering that during the dynamic operation of the device, trap generation will additionally affect the channel potential through carrier trapping/de-trapping dynamic events. For the first time, we introduce the Trapping Induce Barrier Raising (TIBR) effect, which is an insight into the dynamic body instabilities correlated to trap generation in advanced 45nm SOI MOSFETs induced through accelerated stress tests.