Enhanced Terahertz Transmission in MoS 2 /Silicon Heterostructure

MoS 2 /Silicon heterostructure is experimentally demonstrated to have terahertz (THz) transmission enhancement capability. THz spectrum measurements unveil 5% expansion compared with the Si substrate under heat excitations while photon injection induced enhancement originates from THz absorption reduction. The images of THz spots can extend those spectroscopic evolution processes. These findings not only lay a fundamental understanding of properties within transition metal dichalcogenides (TMDs) at THz frequency range, but also envision a novel class of compact, tunable THz modulation and gain devices.