Multi-beam mask writer MBM-2000 (Conference Presentation)

A multi-beam mask writer MBM-2000 is developed for the 3 nm technology node. It is designed to expose EUV blanks with beamlets of total current 1.6 uA at high throughput. It also supports writing leading-edge photomasks by equipping a correction function for glass thermal expansion and high-speed data path. Fast writing modes are provided for middle-grade photomask writing. Inline function of pixel level dose correction (PLDC) is implemented to reduce mask turnaround time by replacing offline corrections with PLDC, with additional benefit of fidelity improvement by dose enhancement. In this paper, writing results of MBM-2000 are reported and discussed.