Research on Fatigue Phenomenon and Internal Mechanism of HfZrO₂ Ferroelectric Thin Film Memory

Abstract The fatigue effect of the HfZrO2 thin film sample plays a vital role in its application in the semiconductor field. This article explores the fatigue mechanism inside the thin film sample by studying the effect of various experimental conditions on the ferroelectric properties of the sample, and analyzes the experimental results. Then we study the experimental results to clarify the changes in the micro-physical mechanism inside the sample.Combined with macro-theory and micro-examination, we observe that experimental conditions such as the pulse width of the applied pulse will affect the change of the sample’s remnant polarization values during the fatigue cycle. Finally, we try to optimize these conditions to achieve stable remanent polarization. This paper further clarifies the fatigue mechanism of the sample through the mathematical analysis of experimental data and the comparison of existing theories, and points out the direction for optimizing the application of the device.