Tail Fitting Yield Estimation Method for Resistive Non-Volatile Memory

This paper demonstrates that the read output voltage difference between data and reference voltages in a resistive non-volatile memory is not a Gaussian distribution but composed of two Gaussian distributions. In addition, a tail fitting method is proposed to estimate a read yield with high accuracy. Monte Carlo HSPICE simulation results based on industry-compatible 45-nm model parameters show that the proposed tail fitting method improves accuracy by $\mathbf{5.2 x}$ and $\mathbf{2.5 x}$ compared to the normal fitting and the importance sampling methods, respectively.