Lateral Heterostructures: 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis (Adv. Funct. Mater. 27/2021)

In article number 2101086, Antony George, Andrey Turchanin, and co-workers present the synthesis of monolayer MoSe2-WSe2 lateral heterostructures with the atomically sharp 1D boundaries via a one-pot chemical vapor deposition process. Various p–n junction devices including rectifiers, solar cells, photodetectors, ambipolar transistors, and light emitting diodes are demonstrated using these atomically thin heterostructures.