Negative capacitance III-V FinFETs for ultra-low-power applications

In this work, we report on negative capacitance (NC) In0.53Ga0.47As FinFETs using ferroelectric (FE) HfZrOx (HZO) as the gate dielectric, exhibiting bi-directional sub-40 mV/dec subthreshold slope (SS) at room temperature. The FE properties of HZO materials are characterized with various film thicknesses using the identical annealing conditions. The scaled HZO thickness (3 nm)shows a small Ids – Vgs hysteresis of 0.07 V for InGaAs NC FinFET which can be attributed to the capacitance match. We also show minimum SSrev of 23 and SSfor of 34 mV/dec on InGaAs NC FinFETs with 5 nm HZO thin film. III-V NC FinFETs with HZO FE materials can be very promising for extremely-high-performance and ultra-low-power CMOS applications.