Negative capacitance III-V FinFETs for ultra-low-power applications
Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 17 - 236th ECS Meeting(2019)
摘要
In this work, we report on negative capacitance (NC) In0.53Ga0.47As FinFETs using ferroelectric (FE) HfZrOx (HZO) as the gate dielectric, exhibiting bi-directional sub-40 mV/dec subthreshold slope (SS) at room temperature. The FE properties of HZO materials are characterized with various film thicknesses using the identical annealing conditions. The scaled HZO thickness (3 nm)shows a small Ids – Vgs hysteresis of 0.07 V for InGaAs NC FinFET which can be attributed to the capacitance match. We also show minimum SSrev of 23 and SSfor of 34 mV/dec on InGaAs NC FinFETs with 5 nm HZO thin film. III-V NC FinFETs with HZO FE materials can be very promising for extremely-high-performance and ultra-low-power CMOS applications.
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关键词
capacitance,ultra-low-power
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