Engineering resist-substrate interface: a quantum chemistry study of self-assembled monolayers

In EUV lithography, radiation chemistry is largely different from DUV. Engineers have explored self-assembled monolayers (SAM) in the context of lithography and some of their properties could be utilized in EUV. We study SAMs and their interaction with substrates using quantum chemistry. Interface chemistry between resists and underlayers is playing an increasingly important role in EUV. it is conceivable that the resist molecules near the interface are susceptible to activation by electrons originated in the substrate. For their monolayer nature and spontaneous ordering, SAMs can be used for engineering interface properties in a predictable manner. Understanding the physical and chemical processes at the interface in the presence of SAMs would be vital for better modelling their effects on imaging. To address these questions, quantum chemistry is used to understand the properties of SAMs, such as their packing order. The surface electronic structure is also studied to elucidate the physical properties at the interface that could impact EUV dose.