Graphene/Bi 2 Se 3 Heterojunction Phototransistor Using Photogating Effect Modulated by Tunable Tunneling Resistance
european quantum electronics conference（2021）
摘要
Mixed-dimensional van der Waals heterostructures [1] are a very promising platform for the next generation of nanoelectronics and nanophotonics, for example, high-sensitivity mid-infrared light detection. Here, we report the versatile functionalities revealed in a hybrid device consisting of two-dimensional graphene and three-dimensional topological insulator.
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关键词
photogating effect modulated,tunable tunneling resistance,mixed-dimensional van der,heterostructures,nanoelectronics,nanophotonics,high-sensitivity mid-infrared light detection,two-dimensional graphene,three-dimensional topological insulator
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